Transistors. 2SC Page 2. Page 3. This datasheet has been downloaded from: Datasheets for electronic components. 2SC datasheet, 2SC circuit, 2SC data sheet: ETC – PRE- AMPLIFIER, LOW LEVEL & LOW NOISE,alldatasheet, datasheet, Datasheet search site. 2SC NTE Equvilent NTEAP NPN audio transistor. NTEAP Silicon NPN Transistor Audio Amplifier. Switch (Compl to NTE). NTE Data Sheet.

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You can organize the transistors into groups of drawers, each dedicated to a particular transistor outline.

Each of the three types listed above can be fabricated with either an N or a P conduction channel. If the lead arrangement of a small replacement transistor differs from that of the the original, you can sometimes bend the transistor leads across one another transisror route them into the correct holes in the circuit board.

De-soldering and replacing a transistor takes very little time.

It’s the direct current that flows into the drain terminal when the gate to source voltage is zero. Just use a bit of spaghetti tubing on the leads datashee keep them from touching each other.

It’s not a good idea to substitute a Darlington transistor for a non-Darlington type, or vice versa. So, altogether, there are six types of field-effect transistors.

This is the only spec you can actually transstor. Field-effect transistors come in three basic types: In a depletion type device, I DSS is an datasneet current. Choose a substitute transistor with a breakdown voltage rating at least as high as the original. One of the following breakdown voltages is usually included in the specifications for a FET: BV DSS – the breakdown voltage between the Drain and the Source terminals when the gate is short-circuited to the source.


Maximum current is the maximum continuous collector current I C that a transistor can withstand without permanent damage.

They also have double the input voltage drop since there are two semiconductor junctions in series. The V EB rating isn’t usually a factor in choosing a substitute transistor. You’ll find that fewer devices need to be stocked, and turnaround time can be reduced.

Finding a substitute replacement transistor isn’t difficult if you transistlr the specs of the original transistor and organize your stock by specs instead of type numbers.

During an avalanche, electrons in the P-N transition regions are accelerated to energies so high that they datxsheet bound electrons with enough force to free them, creating additional charge carriers and greatly multiplying the transistor current.

Transistor Substitution

A Transistor Outline number, or TOrefers to a transistor’s physical size, shape, and mounting style. In each of these ratings, the 3rd terminal is assumed to be electrically open unconnected. This is the same spec used for bipolar transistors. A TO-5 transistor with a P D of 3 watts might be able to dissipate watts with a heat sink. P D is the overall power the FET can dissipate through heat.

However, the transistor’s transisttor sheet will show you that. Choose a substitute with a rating at least as high as the original.

For a depletion-type FET, the gate-source bias voltage might be 0 V i. If you install the transisror polarity, the sandwich won’t work.

A junction transistor is a sandwich of “N” and “P” type semiconductors. Actual circuit gain depends on other components.

2SC9 00,2SC9 011,2SC9 011D,2SC9 011E,2SC9 011F,2SC9 011G,2SC9 011H,2SC9 011I,2SC9 013,2SC9 014,2SC9

Current gain is only occasionally significant when choosing a substitute transistor. The following electrical specs are important when choosing a substitute BJT. Data sheets often specify a minimum or typical value of h FEor else a range of values that applies at a certain collector current I C. Bipolar junction transistors BJT s are the most common variety of transistor. You can find transistor specs in data sheets available online. But if the original transistor has a high gain, try to match it.


One measure of gain, called h FEis often used for comparing transistors. This rating is used primarily with JFETs. Then, when you need to pick a substitute for an original transistor, you can quickly home in on all your potential candidates.

One of the following breakdown voltages is usually included in the specifications for a FET:. There are three breakdown voltages: The first spec to consider is the Transistor Outline.

V CB – the maximum voltage across the Collector-Base terminals V CE transiistor the maximum voltage across the Collector-Emitter terminals V EB – the maximum voltage across the Emitter-Base terminals In each of these ratings, the 3rd terminal is assumed to be electrically open unconnected.

But you might already have a suitable substitute in your parts drawers. Pick a substitute FET with a rating at least as high as the original. Knowing how to substitute an alternate transistor type can speed up your repair, or make an otherwise impossible repair possible.

Some TO numbers are shown here:.